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Polycrystalline ZnO-In2O3 thin films as gas sensors

Identifieur interne : 002731 ( Main/Repository ); précédent : 002730; suivant : 002732

Polycrystalline ZnO-In2O3 thin films as gas sensors

Auteurs : RBID : Pascal:12-0332787

Descripteurs français

Pascal (Inist)
- Couche mince, Capteur de gaz, Oxydation, Evaporation sous vide, Traitement thermique, Diffraction électron, Conductivité électrique, Ammoniac, Méthane, Acétone, Ethanol, Structure cristalline, Propriété électrique, Polycristal, Oxyde de zinc, Oxyde d'indium, Gallium Sulfoséléniure, Formaldéhyde, ZnO, In2O3, Substrat verre, GaSSe, 0707D, 7361, 7350.

English descriptors

KwdEn :
- Acetone, Ammonia, Crystal structure, Electrical conductivity, Electrical properties, Electron diffraction, Ethanol, Formaldehyde, Gallium Selenides sulfides, Gas sensors, Heat treatments, Indium oxide, Methane, Oxidation, Polycrystals, Thin films, Vacuum evaporation, Zinc oxide.

Abstract

Polycrystalline ZnO-In₂O₃ thin films were prepared by thermal oxidation in air of metallic Zn-In films deposited onto glass substrates by thermal evaporation under vacuum. Different oxidation conditions (oxidation temperature, oxidation time, heating rate) were used in order to prepare homogeneous films that can be used as gas sensors. Polycrystalline structure of the as-obtained films was confirmed by X-ray and electron diffraction investigations. The electrical conductivity of various thin film samples ranged between 0.84 and 6.44 (Ω cm)^-1. Gas sensitivity to six different gasses (ammonia, methane, LPG, acetone, ethanol and formaldehyde) was evaluated and it was found that the highest sensitivity was obtained for ammonia.

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to stream Main, to step Corpus: 001961

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Pascal:12-0332787

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Polycrystalline ZnO-In<sub>2</sub>
O<sub>3</sub>
 thin films as gas sensors</title>
<author><name sortKey="Rambu, A P" uniqKey="Rambu A">A. P. Rambu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, "A. I. Cuza" University</s1>
<s2>700506 Iasi</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Roumanie</country>
<wicri:noRegion>700506 Iasi</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Sirbu, D" uniqKey="Sirbu D">D. Sirbu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, "A. I. Cuza" University</s1>
<s2>700506 Iasi</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Roumanie</country>
<wicri:noRegion>700506 Iasi</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Iftimie, N" uniqKey="Iftimie N">N. Iftimie</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>National Institute of Research and Development for Technical Physics, 47 Mangeron Blvd</s1>
<s2>700050 Iasi</s2>
<s3>ROU</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Roumanie</country>
<wicri:noRegion>700050 Iasi</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Rusu, G I" uniqKey="Rusu G">G. I. Rusu</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Physics, "A. I. Cuza" University</s1>
<s2>700506 Iasi</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>Roumanie</country>
<wicri:noRegion>700506 Iasi</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0332787</idno>
<date when="2011">2011</date>
<idno type="stanalyst">PASCAL 12-0332787 INIST</idno>
<idno type="RBID">Pascal:12-0332787</idno>
<idno type="wicri:Area/Main/Corpus">001961</idno>
<idno type="wicri:Area/Main/Repository">002731</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0040-6090</idno>
<title level="j" type="abbreviated">Thin solid films</title>
<title level="j" type="main">Thin solid films</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acetone</term>
<term>Ammonia</term>
<term>Crystal structure</term>
<term>Electrical conductivity</term>
<term>Electrical properties</term>
<term>Electron diffraction</term>
<term>Ethanol</term>
<term>Formaldehyde</term>
<term>Gallium Selenides sulfides</term>
<term>Gas sensors</term>
<term>Heat treatments</term>
<term>Indium oxide</term>
<term>Methane</term>
<term>Oxidation</term>
<term>Polycrystals</term>
<term>Thin films</term>
<term>Vacuum evaporation</term>
<term>Zinc oxide</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Couche mince</term>
<term>Capteur de gaz</term>
<term>Oxydation</term>
<term>Evaporation sous vide</term>
<term>Traitement thermique</term>
<term>Diffraction électron</term>
<term>Conductivité électrique</term>
<term>Ammoniac</term>
<term>Méthane</term>
<term>Acétone</term>
<term>Ethanol</term>
<term>Structure cristalline</term>
<term>Propriété électrique</term>
<term>Polycristal</term>
<term>Oxyde de zinc</term>
<term>Oxyde d'indium</term>
<term>Gallium Sulfoséléniure</term>
<term>Formaldéhyde</term>
<term>ZnO</term>
<term>In2O3</term>
<term>Substrat verre</term>
<term>GaSSe</term>
<term>0707D</term>
<term>7361</term>
<term>7350</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Polycrystalline ZnO-In<sub>2</sub>
O<sub>3</sub>
 thin films were prepared by thermal oxidation in air of metallic Zn-In films deposited onto glass substrates by thermal evaporation under vacuum. Different oxidation conditions (oxidation temperature, oxidation time, heating rate) were used in order to prepare homogeneous films that can be used as gas sensors. Polycrystalline structure of the as-obtained films was confirmed by X-ray and electron diffraction investigations. The electrical conductivity of various thin film samples ranged between 0.84 and 6.44 (Ω cm)<sup>-1</sup>
. Gas sensitivity to six different gasses (ammonia, methane, LPG, acetone, ethanol and formaldehyde) was evaluated and it was found that the highest sensitivity was obtained for ammonia.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0>
</fA01>
<fA02 i1="01"><s0>THSFAP</s0>
</fA02>
<fA03 i2="1"><s0>Thin solid films</s0>
</fA03>
<fA05><s2>520</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Polycrystalline ZnO-In<sub>2</sub>
O<sub>3</sub>
 thin films as gas sensors</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Transparent Conductive Materials (TCM 2010)</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>RAMBU (A. P.)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SIRBU (D.)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>IFTIMIE (N.)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>RUSU (G. I.)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>KIRIAKIDIS (George)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Faculty of Physics, "A. I. Cuza" University</s1>
<s2>700506 Iasi</s2>
<s3>ROU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>National Institute of Research and Development for Technical Physics, 47 Mangeron Blvd</s1>
<s2>700050 Iasi</s2>
<s3>ROU</s3>
<sZ>3 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>University of Crete. Physics Department</s1>
<s3>GRC</s3>
<s9>org-cong.</s9>
</fA18>
<fA18 i1="02" i2="1"><s1>Foundation for Research and Technology - Hellas (FORTH). Institute of Electronic Structure and Lasers (IESL)</s1>
<s3>GRC</s3>
<s9>org-cong.</s9>
</fA18>
<fA20><s1>1303-1307</s1>
</fA20>
<fA21><s1>2011</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>13597</s2>
<s5>354000502898920280</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>36 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0332787</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Thin solid films</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Polycrystalline ZnO-In<sub>2</sub>
O<sub>3</sub>
 thin films were prepared by thermal oxidation in air of metallic Zn-In films deposited onto glass substrates by thermal evaporation under vacuum. Different oxidation conditions (oxidation temperature, oxidation time, heating rate) were used in order to prepare homogeneous films that can be used as gas sensors. Polycrystalline structure of the as-obtained films was confirmed by X-ray and electron diffraction investigations. The electrical conductivity of various thin film samples ranged between 0.84 and 6.44 (Ω cm)<sup>-1</sup>
. Gas sensitivity to six different gasses (ammonia, methane, LPG, acetone, ethanol and formaldehyde) was evaluated and it was found that the highest sensitivity was obtained for ammonia.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B00G07D</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B70C61</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B70C50</s0>
</fC02>
<fC02 i1="04" i2="X"><s0>001D03C</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Thin films</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Capteur de gaz</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Gas sensors</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Oxydation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Oxidation</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Evaporation sous vide</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Vacuum evaporation</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Traitement thermique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Heat treatments</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Diffraction électron</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Electron diffraction</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Conductivité électrique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Electrical conductivity</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Ammoniac</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Ammonia</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Méthane</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Methane</s0>
<s2>NK</s2>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Acétone</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Acetone</s0>
<s2>NK</s2>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Ethanol</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Ethanol</s0>
<s2>NK</s2>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Structure cristalline</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Crystal structure</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Propriété électrique</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Electrical properties</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Polycristal</s0>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Polycrystals</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Oxyde de zinc</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Zinc oxide</s0>
<s5>16</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Zinc óxido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Oxyde d'indium</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Indium oxide</s0>
<s5>17</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Indio óxido</s0>
<s5>17</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Gallium Sulfoséléniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Gallium Selenides sulfides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>18</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Seleniuro sulfuro</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>18</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Formaldéhyde</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Formaldehyde</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>ZnO</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Substrat verre</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>GaSSe</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="23" i2="3" l="FRE"><s0>0707D</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>7361</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="25" i2="3" l="FRE"><s0>7350</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fN21><s1>254</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>International Symposia on Transparent Conductive Materials (TCM 2010)</s1>
<s3>Analipsi/Hersonissos, Crete GRC</s3>
<s4>2011-10-17</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Polycrystalline ZnO-In2O3 thin films as gas sensors

Polycrystalline ZnO-In2O3 thin films as gas sensors

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri